X-ray certifies perfection of one-dimensional Bi nanolines buried in silicon crystal

Control of nano-structures with molecular precision is a key problem in nano sciences and technologies. While the surface can be readily imaged by scanning probe microscopes, it is not easy to observe buried structures nondestructively. Dr. O. Sakata and his colleagues recently reported on their success in fabricating Bi nanowires on a Si(001) substrate and their encapsulation in an epitaxially grown crystalline silicon layer. To explore the buried nanowires, they employed X-ray diffraction (reciprocal-lattice space mapping) with 25.3 keV photons at grazing-incidence geometry (~0.1 deg) using an image plate as a 2D detector. The results indicate that the nanolines maintain their one-dimensional character and Bi dimerization. The experiments were carried out at beamline BL13XU, SPring-8, Harima, Japan. For more information, see the paper, "Encapsulation of atomic-scale Bi wires in epitaxial silicon without loss of structure", O. Sakata et al., Phys. Rev. B 72, 121407(R) (2005).