Novel synchrotron X-ray diffraction technique for observing GaAs surface

At SPring-8, Harima Japan, Dr. M. Takahasi (Japan Atomic Energy Agency) and his coworkers have recently established a powerful surface X-ray diffraction tool for observing the growth process of semiconductor-like GaAs. The main feature of the method is the use of multi-energy X-rays, and because of this, it is possible to identify both the atomic arrangements and the type of atoms. Another significant advantage is the capability of real-time monitoring due to the employment of a brilliant undulator beam. It was demonstrated that the surface structure called c(4x4), which is observed under certain growth conditions, has dimmers that consist of gallium and arsenic atoms in the top surface layer. For more information, see the paper, "Element-Specific Surface X-Ray Diffraction Study of GaAs(001)-c(4×4)", M. Takahasi et al., Phys. Rev. Lett. 96, 055506 (2006).